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  学术报告会通知: Challenges of the Integration of Millimeter Wave Power Amplifier Using Nanometer Silicon Technologies  


题 目: Challenges of the Integration of Millimeter Wave Power Amplifier Using Nanometer Silicon Technologies

报告人Anthony Ghiotto

时  间 20140825日(周一)10:00~11:00

地  点江宁开发区,秣周东路9号,无线谷A33412会议室

主  办 东南大学毫米波国家重点实验室

                   IEEE AP-MTT-EMC Joint Nanjing Chapter



Recent advances in silicon-based technologies along with a demand for higher-speed wireless connections have driven the development of WLANs standards operating at 60 GHz such as WiGig. Such applications require a low-cost and low-power implementation, which favors the adoption of System-on-Chip implementations for the transceivers. Therefore, due to the large amount of digital circuitry integrated in such systems, the use of advanced CMOS nodes becomes the most suitable technology choice. Nevertheless, the use of downscaled processes poses a number of challenges in the design of analog and RF blocks. Namely, for the design of power amplifiers (PAs), the low breakdown voltage makes it increasingly difficult to obtain high output power levels. Moreover, as the back-end-of-line of the technologies is scaled, passive devices tend to become increasingly lossy.

This presentation will discuss about the challenges of the integration of power amplifier using nanometer silicon technologies. 60 GHz PA design flow, design considerations and realization will be presented together with 60 GHz and 80 GHz BiCMOS SiGe and CMOS SOI PA and antenna co-integration.


Anthony Ghiotto received the M.Sc. degree in 2005 and the Ph.D. degree in 2008 all in electrical engineering from the Grenoble Institute of Technology, Grenoble, France. He has been a Post-Doctoral fellow from 2009 to 2011 and a Research Associates from 2011 to 2012 in Pr. Ke WU team at the Poly-Grames Research Center from the École Polytechnique de Montréal, Montréal, QC, Canada.

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